HUF75645P3
Manufacturer:
On Semiconductor
Mfr.Part #:
HUF75645P3
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 310 W 100 V Continuous Drain Current (ID):75 A 238 nC
| Parameter | Value |
|---|---|
| Gate Charge | 238 nC |
| Gate to Source Threshold Voltage | 2 V |
| Continuous Drain Current (ID) | 75 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 14 mΩ |
| Input capacitance | 3.79 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 310 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 485
Distributors
pcbx
pcbxUnit Price$2.37792
Ext.Price$2.37792
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.37792 | $2.37792 |
| 10 | $1.89527 | $18.95270 |
| 25 | $1.51058 | $37.76450 |
| 50 | $1.20397 | $60.19850 |
| 100 | $1.09052 | $109.05200 |
| 300 | $0.98608 | $295.82400 |
| 500 | $0.89165 | $445.82500 |
| 1000 | $0.82776 | $827.76000 |